5HP01M-TL-E
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onsemi 5HP01M-TL-E

Manufacturer No:
5HP01M-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
5HP01M-TL-E Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 50V 70MA 3MCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:22Ohm @ 40mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:1.32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6.2 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):150mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MCP
Package / Case:SC-70, SOT-323
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Similar Products

Part Number 5HP01M-TL-E 5LP01M-TL-E   5HP01M-TL-H   5HN01M-TL-E  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 70mA (Ta) 70mA (Ta) 70mA (Ta) 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 1.5V, 4V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 22Ohm @ 40mA, 10V 23Ohm @ 40mA, 4V 22Ohm @ 40mA, 10V 7.5Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs 1.32 nC @ 10 V 1.4 nC @ 10 V 1.32 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±10V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6.2 pF @ 10 V 7.4 pF @ 10 V 6.2 pF @ 10 V 6.2 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 150mW (Ta) 150mW (Ta) 150mW (Ta) 150mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package MCP MCP MCP MCP
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323

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