onsemi-3MN03SF-TL-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	320MHz
Noise Figure (dB Typ @ f):	3dB @ 100MHz
Gain:	-
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 1mA, 6V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	3-SMD, Flat Lead
Supplier Device Package:	3-SSFP

onsemi 3MN03SF-TL-E