onsemi-2SK536-TB-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50 V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	15 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	200mW (Ta)
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	3-CP
Package / Case:	TO-236-3, SC-59, SOT-23-3

onsemi 2SK536-TB-E