onsemi-2SK4177-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1500 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	37.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	380 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	80W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SMP-FD
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

onsemi 2SK4177-E