2SK4124-1E
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onsemi 2SK4124-1E

Manufacturer No:
2SK4124-1E
Manufacturer:
onsemi
Package:
Tube
Datasheet:
2SK4124-1E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 20A TO3P-3L
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:46.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 170W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P-3L
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number 2SK4124-1E 2SK4125-1E  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 8A, 10V 610mOhm @ 7A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 46.6 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 30 V 1200 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 170W (Tc) 2.5W (Ta), 170W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P-3L TO-3P-3L
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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