2SK4117LS
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onsemi 2SK4117LS

Manufacturer No:
2SK4117LS
Manufacturer:
onsemi
Package:
Bag
Datasheet:
2SK4117LS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 10.4A TO220FI
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:10.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:30.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:755 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FI(LS)
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number 2SK4117LS 2SK4197LS   2SK4116LS  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 600 V 400 V
Current - Continuous Drain (Id) @ 25°C 10.4A (Tc) 3.5A (Tc) 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 7.5A, 10V 3.25Ohm @ 1.8A, 10V 540mOhm @ 6A, 10V
Vgs(th) (Max) @ Id - 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.6 nC @ 10 V 11 nC @ 10 V 24.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 755 pF @ 30 V 260 pF @ 30 V 650 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta), 35W (Tc) 2W (Ta), 28W (Tc) 2W (Ta), 33W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FI(LS) TO-220FI(LS) TO-220FI(LS)
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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