2SK4066-1E
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onsemi 2SK4066-1E

Manufacturer No:
2SK4066-1E
Manufacturer:
onsemi
Package:
Tube
Datasheet:
2SK4066-1E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 100A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12500 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.65W (Ta), 90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number 2SK4066-1E 2SK4066-E  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V 4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12500 pF @ 20 V 12500 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.65W (Ta), 90W (Tc) 1.65W (Ta), 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-262-3 SMP
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3, Short Tab

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