2SK3821-E
  • Share:

onsemi 2SK3821-E

Manufacturer No:
2SK3821-E
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
2SK3821-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 40A SMP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.65W (Ta), 65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:SMP
Package / Case:TO-220-3, Short Tab
0 Remaining View Similar

In Stock

$2.80
225

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2SK3821-E 2SK3820-E  
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V -
Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 20 V -
FET Feature - -
Power Dissipation (Max) 1.65W (Ta), 65W (Tc) -
Operating Temperature 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package SMP -
Package / Case TO-220-3, Short Tab -

Related Product By Categories

UPA2804T1L-E2-AT
UPA2804T1L-E2-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
UPA2760T1A-E2-AT
UPA2760T1A-E2-AT
Renesas Electronics America Inc
9A, 30V, N-CHANNEL MOSFET
SIS128LDN-T1-GE3
SIS128LDN-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 10.2A/33.7A PPAK
LND01K1-G
LND01K1-G
Microchip Technology
MOSFET N-CH 9V 330MA SOT23-5
CSD17585F5
CSD17585F5
Texas Instruments
MOSFET N-CH 30V 5.9A 3PICOSTAR
PJQ2408_R1_00001
PJQ2408_R1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
FDD5N50FTM-WS
FDD5N50FTM-WS
onsemi
MOSFET N-CH 500V 3.5A DPAK
IXFK30N100Q2
IXFK30N100Q2
IXYS
MOSFET N-CH 1000V 30A TO264AA
STP40NS15
STP40NS15
STMicroelectronics
MOSFET N-CH 150V 40A TO220AB
STI15NM60N
STI15NM60N
STMicroelectronics
MOSFET N-CH 600V 14A I2PAK
NVMFS5C670NLWFT1G
NVMFS5C670NLWFT1G
onsemi
MOSFET N-CH 60V 17A/71A 5DFN
RSS100N03FU6TB
RSS100N03FU6TB
Rohm Semiconductor
MOSFET N-CH 30V 10A 8SOP

Related Product By Brand

SHN2D02FUTW1T1G
SHN2D02FUTW1T1G
onsemi
DIODE SWITCHING SC88
SS2003M-TL-E
SS2003M-TL-E
onsemi
DIODE SCHOTTKY 30V 2A 6MCPH
1N6016B_T50A
1N6016B_T50A
onsemi
DIODE ZENER 47V 500MW DO35
STK541UC62K-E
STK541UC62K-E
onsemi
MOD IPM 600V 10A 23PWRSIP
NB6L295MMNG
NB6L295MMNG
onsemi
IC DELAY LINE 512TAP PROG 24QFN
NCV274DR2G
NCV274DR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
SC324NG
SC324NG
onsemi
IC OPAMP GP 14DIP
MC100E171FNG
MC100E171FNG
onsemi
IC DIFF DIG MULTPL 3X4:1 28PLCC
MC34262DR2
MC34262DR2
onsemi
IC PFC CTRLR CRM 8SOIC
SG3525ADWR2
SG3525ADWR2
onsemi
IC REG CTRLR PUSH-PULL 16SOIC
NCP6151NS52MNR2G
NCP6151NS52MNR2G
onsemi
IC REG IMVP-7 VR12 2OUT 52QFN
H11A617B300
H11A617B300
onsemi
OPTOISO 5.3KV TRANSISTOR 4DIP