onsemi-2SJ665-DL-1EX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	27A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	77mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	74 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4200 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	65W (Tc)
Operating Temperature:	150°C (TA)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

onsemi 2SJ665-DL-1EX