2SJ661-DL-1E
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onsemi 2SJ661-DL-1E

Manufacturer No:
2SJ661-DL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
2SJ661-DL-1E Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 38A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.65W (Ta), 65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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Similar Products

Part Number 2SJ661-DL-1E 2SJ661-DL-E  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta) 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 19A, 10V 39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id - 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 20 V 4360 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.65W (Ta), 65W (Tc) 1.65W (Ta), 65W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-2 SMP-FD
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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