2SJ650
  • Share:

onsemi 2SJ650

Manufacturer No:
2SJ650
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
2SJ650 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 12A TO220ML
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220ML
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$0.37
2,402

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2SJ650 2SJ654   2SJ655   2SJ651   2SJ652   2SJ657   2SJ656   2SJ350  
Manufacturer onsemi onsemi onsemi onsemi Sanyo Sanyo onsemi Renesas Electronics America Inc
Product Status Obsolete Active Obsolete Obsolete Active Active Obsolete Active
FET Type P-Channel - P-Channel P-Channel P-Channel - P-Channel -
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V - 100 V 60 V 60 V - 100 V -
Current - Continuous Drain (Id) @ 25°C 12A (Ta) - 12A (Ta) 20A (Ta) 28A (Ta) - 18A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - - - - 4V, 10V - 4V, 10V -
Rds On (Max) @ Id, Vgs 135mOhm @ 6A, 10V - 136mOhm @ 6A, 10V 60mOhm @ 10A, 10V 38mOhm @ 14A, 10V - 75.5mOhm @ 9A, 10V -
Vgs(th) (Max) @ Id - - - - - - - -
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V - 41 nC @ 10 V 45 nC @ 10 V 80 nC @ 10 V - 74 nC @ 10 V -
Vgs (Max) - - - - ±20V - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 20 V - 2090 pF @ 20 V 2200 pF @ 20 V 4360 pF @ 20 V - 4200 pF @ 20 V -
FET Feature - - - - - - - -
Power Dissipation (Max) 2W (Ta), 20W (Tc) - 2W (Ta), 25W (Tc) 2W (Ta), 25W (Tc) 2W (Ta), 30W (Tc) - 2W (Ta), 30W (Tc) -
Operating Temperature 150°C (TJ) - 150°C (TJ) 150°C (TJ) 150°C (TJ) - 150°C (TJ) -
Mounting Type Through Hole - Through Hole Through Hole Through Hole - Through Hole -
Supplier Device Package TO-220ML - TO-220ML TO-220ML TO-220ML - TO-220ML -
Package / Case TO-220-3 Full Pack - TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack - TO-220-3 Full Pack -

Related Product By Categories

DMG2301L-7
DMG2301L-7
Diodes Incorporated
MOSFET P-CH 20V 3A SOT23
CSD22206WT
CSD22206WT
Texas Instruments
MOSFET P-CH 8V 5A 9DSBGA
IRF6637TRPBF
IRF6637TRPBF
Infineon Technologies
IRF6637 - 12V-300V N-CHANNEL POW
GC11N65M
GC11N65M
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
DMN65D8LQ-7
DMN65D8LQ-7
Diodes Incorporated
MOSFET N-CH 60V 310MA SOT23
NP36P04KDG-E1-AY
NP36P04KDG-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 40V 36A TO263
IRFZ10PBF
IRFZ10PBF
Vishay Siliconix
MOSFET N-CH 60V 10A TO220AB
IXTH26P20P
IXTH26P20P
IXYS
MOSFET P-CH 200V 26A TO247
IXFH40N30Q
IXFH40N30Q
IXYS
MOSFET N-CH 300V 40A TO247AD
FQB6N15TM
FQB6N15TM
onsemi
MOSFET N-CH 150V 6.4A D2PAK
FDD8444L-F085
FDD8444L-F085
onsemi
MOSFET N-CH 40V 16A/50A TO252AA
IPL65R310E6AUMA1
IPL65R310E6AUMA1
Infineon Technologies
MOSFET N-CH 650V 13.1A THIN-PAK

Related Product By Brand

GBPC1201W
GBPC1201W
onsemi
BRIDGE RECT 1P 100V 12A GBPC-W
MURHB840CTT4
MURHB840CTT4
onsemi
DIODE ULTRA FAST 400V 4A D2PAK
1N5368BG
1N5368BG
onsemi
DIODE ZENER 47V 5W AXIAL
NSVBC850BLT1G
NSVBC850BLT1G
onsemi
TRANS NPN 45V 0.1A SOT23-3
BC238ABU
BC238ABU
onsemi
TRANS NPN 25V 0.1A TO92-3
LM358AN
LM358AN
onsemi
IC OPAMP GP 2 CIRCUIT 8DIP
MC74ACT125DTR2G
MC74ACT125DTR2G
onsemi
IC BUF NON-INVERT 5.5V 14TSSOP
MC100EP31DTG
MC100EP31DTG
onsemi
IC FF D-TYPE SNGL 1BIT 8TSSOP
MC74LCX14DTR2G
MC74LCX14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP1239AD65R2G
NCP1239AD65R2G
onsemi
IC OFFLINE SWITCH FLYBACK 7SOIC
LV5725JAZ-ZH
LV5725JAZ-ZH
onsemi
IC REG CTRLR BUCK 16SSOP
MC33269T-5.0
MC33269T-5.0
onsemi
IC REG LINEAR 5V 800MA TO220AB