onsemi-2SD1801T-TL-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SD1801T-TL-E	2SD1803T-TL-E	2SD1802T-TL-E	2SD1801S-TL-E
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Active	Obsolete
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2 A	5 A	3 A	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 1A	400mV @ 150mA, 3A	500mV @ 100mA, 2A	400mV @ 50mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	1µA (ICBO)	1µA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V	200 @ 500mA, 2V	200 @ 100mA, 2V	100 @ 100mA, 2V
Power - Max	800 mW	1 W	1 W	800 mW
Frequency - Transition	150MHz	180MHz	150MHz	150MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TP-FA	TP-FA	TP-FA	TP-FA

onsemi 2SD1801T-TL-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 2V
Power - Max:	800 mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TP-FA