onsemi-2SD1801S-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SD1801S-E	2SD1804S-E	2SD1802S-E	2SD1803S-E	2SD1801T-E
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Obsolete	Active	Obsolete
Transistor Type	NPN	-	NPN	NPN	-
Current - Collector (Ic) (Max)	2 A	-	3 A	5 A	-
Voltage - Collector Emitter Breakdown (Max)	50 V	-	50 V	50 V	-
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 1A	-	500mV @ 100mA, 2A	400mV @ 150mA, 3A	-
Current - Collector Cutoff (Max)	100nA (ICBO)	-	1µA (ICBO)	1µA (ICBO)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 100mA, 2V	-	140 @ 100mA, 2V	140 @ 500mA, 2V	-
Power - Max	800 mW	-	1 W	1 W	-
Frequency - Transition	150MHz	-	150MHz	180MHz	-
Operating Temperature	150°C (TJ)	-	150°C (TJ)	150°C (TJ)	-
Mounting Type	Through Hole	-	Through Hole	Through Hole	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	-	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	-
Supplier Device Package	TP	-	TP	TP	-

onsemi 2SD1801S-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 100mA, 2V
Power - Max:	800 mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP