onsemi-2SD1623S-TD-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SD1623S-TD-E	2SD1623T-TD-E	2SD1624S-TD-E
Manufacturer	onsemi	onsemi	onsemi
Product Status	Active	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2 A	2 A	3 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 1A	400mV @ 50mA, 1A	500mV @ 100mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V	100 @ 100mA, 2V	140 @ 100mA, 2V
Power - Max	500 mW	500 mW	500 mW
Frequency - Transition	150MHz	150MHz	150MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	PCP	PCP	PCP

onsemi 2SD1623S-TD-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 2V
Power - Max:	500 mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP