onsemi-2SD1207T-AE - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SD1207T-AE	2SD1207S-AE
Manufacturer	onsemi	Sanyo
Product Status	Obsolete	Active
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 1A	400mV @ 50mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V	100 @ 100mA, 2V
Power - Max	1 W	1 W
Frequency - Transition	150MHz	150MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package	TO-92 (TO-226)	3-MP

onsemi 2SD1207T-AE

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 2V
Power - Max:	1 W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:	TO-92 (TO-226)