onsemi-2SC6098-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SC6098-E	2SC6099-E	2SC6097-E
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2.5 A	2 A	3 A
Voltage - Collector Emitter Breakdown (Max)	80 V	100 V	60 V
Vce Saturation (Max) @ Ib, Ic	165mV @ 50mA, 1A	165mV @ 100mA, 1A	135mV @ 100mA, 1A
Current - Collector Cutoff (Max)	1µA (ICBO)	1µA (ICBO)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100mA, 5V	300 @ 100mA, 5V	300 @ 100mA, 2V
Power - Max	800 mW	800 mW	800 mW
Frequency - Transition	350MHz	300MHz	390MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	TP	TP	TP

onsemi 2SC6098-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2.5 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	165mV @ 50mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 5V
Power - Max:	800 mW
Frequency - Transition:	350MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP