onsemi-2SC6097-TL-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SC6097-TL-E	2SC6099-TL-E	2SC6098-TL-E	2SC6017-TL-E
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Not For New Designs	Active	Obsolete
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	3 A	2 A	2.5 A	10 A
Voltage - Collector Emitter Breakdown (Max)	60 V	100 V	80 V	50 V
Vce Saturation (Max) @ Ib, Ic	135mV @ 100mA, 1A	165mV @ 100mA, 1A	165mV @ 50mA, 1A	360mV @ 250mA, 5A
Current - Collector Cutoff (Max)	1µA (ICBO)	1µA (ICBO)	1µA (ICBO)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100mA, 2V	300 @ 100mA, 5V	300 @ 100mA, 5V	200 @ 1A, 2V
Power - Max	800 mW	800 mW	800 mW	950 mW
Frequency - Transition	390MHz	300MHz	350MHz	200MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TP	TP-FA	TP-FA	TP-FA

onsemi 2SC6097-TL-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	135mV @ 100mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 2V
Power - Max:	800 mW
Frequency - Transition:	390MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP