onsemi-2SC6082-1E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	15 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 330mA, 2V
Power - Max:	2 W
Frequency - Transition:	195MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F-3SG

onsemi 2SC6082-1E