onsemi-2SC6023-TR-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.5V
Frequency - Transition:	14.5GHz
Noise Figure (dB Typ @ f):	1.2dB @ 2GHz
Gain:	9.5dB ~ 11dB
Power - Max:	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 15mA, 3V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	4-MCP

onsemi 2SC6023-TR-E