onsemi-2SC5646A-TL-H - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4V
Frequency - Transition:	10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f):	1.5dB @ 2GHz
Gain:	9.5dB ~ 10.5dB @ 2GHz
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 1V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-81
Supplier Device Package:	3-SSFP

onsemi 2SC5646A-TL-H