onsemi-2SC5536A-TL-H - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	1.7GHz
Noise Figure (dB Typ @ f):	1.8dB @ 150MHz
Gain:	16dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 3mA, 2V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-81
Supplier Device Package:	3-SSFP

onsemi 2SC5536A-TL-H