onsemi-2SC5277A-2-TL-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Gain:	10dB ~ 5.5dB @ 1.5GHz
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 10mA, 5V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SMCP

onsemi 2SC5277A-2-TL-E