onsemi-2SC5245A-4-TL-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
Gain:	10dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 10mA, 5V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	3-MCP

onsemi 2SC5245A-4-TL-E