onsemi-2SC5227A-4-TB-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Part Number	2SC5227A-4-TB-E	2SC5227A-5-TB-E
Manufacturer	onsemi	onsemi
Product Status	Active	Active
Transistor Type	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	10V	10V
Frequency - Transition	7GHz	7GHz
Noise Figure (dB Typ @ f)	1dB @ 1GHz	1dB @ 1GHz
Gain	12dB	12dB
Power - Max	200mW	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 20mA, 5V	135 @ 20mA, 5V
Current - Collector (Ic) (Max)	70mA	70mA
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	3-CP	3-CP

onsemi 2SC5227A-4-TB-E

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1dB @ 1GHz
Gain:	12dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 5V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	3-CP