onsemi-2SC4135T-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SC4135T-E	2SC4134T-E	2SC4135S-E
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2 A	1 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 100mA, 1A	400mV @ 40mA, 400mA	400mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 5V	200 @ 100mA, 5V	140 @ 100mA, 5V
Power - Max	1 W	800 mW	1 W
Frequency - Transition	120MHz	120MHz	120MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	TP	TP	TP

onsemi 2SC4135T-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 5V
Power - Max:	1 W
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP