onsemi-2SC3649T-TD-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SC3649T-TD-E	2SC3649T-TD-H	2SC3646T-TD-E	2SC3647T-TD-E	2SC3648T-TD-E	2SC3649S-TD-E
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Obsolete	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1.5 A	1.5 A	1 A	2 A	700 mA	1.5 A
Voltage - Collector Emitter Breakdown (Max)	160 V	160 V	100 V	100 V	160 V	160 V
Vce Saturation (Max) @ Ib, Ic	450mV @ 50mA, 500mA	450mV @ 50mA, 500mA	400mV @ 40mA, 400mA	400mV @ 100mA, 1A	400mV @ 25mA, 250mA	450mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	1µA (ICBO)	1µA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V	200 @ 100mA, 5V	100 @ 100mA, 5V	100 @ 100mA, 5V	100 @ 100mA, 5V	100 @ 100mA, 5V
Power - Max	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW
Frequency - Transition	120MHz	120MHz	120MHz	120MHz	120MHz	120MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	PCP	PCP	PCP	PCP	PCP	PCP

onsemi 2SC3649T-TD-E

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	160 V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 5V
Power - Max:	500 mW
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP