onsemi-2SC3646T-P-TD-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SC3646T-P-TD-E	2SC3646S-P-TD-E
Manufacturer	onsemi	onsemi
Product Status	Obsolete	Active
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 40mA, 400mA	400mV @ 40mA, 400mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 5V	140 @ 100mA, 5V
Power - Max	500 mW	500 mW
Frequency - Transition	120MHz	120MHz
Operating Temperature	-	-
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA
Supplier Device Package	PCP	PCP

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 40mA, 400mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 5V
Power - Max:	500 mW
Frequency - Transition:	120MHz
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP

onsemi 2SC3646T-P-TD-E