onsemi-2SB817C-1E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	12 A
Voltage - Collector Emitter Breakdown (Max):	140 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 500mA, 5A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 5V
Power - Max:	120 W
Frequency - Transition:	10MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P-3L

onsemi 2SB817C-1E