onsemi-2SB1203T-H-TL-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SB1203T-H-TL-E	2SB1203S-H-TL-E
Manufacturer	onsemi	onsemi
Product Status	Obsolete	Obsolete
Transistor Type	PNP	PNP
Current - Collector (Ic) (Max)	5 A	5 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	550mV @ 150mA, 3A	550mV @ 150mA, 3A
Current - Collector Cutoff (Max)	1µA (ICBO)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V	140 @ 500mA, 2V
Power - Max	1 W	1 W
Frequency - Transition	130MHz	130MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TP-FA	TP-FA

onsemi 2SB1203T-H-TL-E

Transistor Type:	PNP
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	550mV @ 150mA, 3A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 2V
Power - Max:	1 W
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TP-FA