onsemi-2SA2169-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	580mV @ 250mA, 5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 2V
Power - Max:	950 mW
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP

onsemi 2SA2169-E