onsemi-2SA1778-3-TB-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	PNP
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.2GHz
Noise Figure (dB Typ @ f):	2.5dB @ 400MHz
Gain:	13dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	3-CP

onsemi 2SA1778-3-TB-E