onsemi-2SA1416S-TD-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2SA1416S-TD-E	2SA1418S-TD-E	2SA1416T-TD-E	2SA1419S-TD-E	2SA1417S-TD-E	2SA1415S-TD-E
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP	-
Current - Collector (Ic) (Max)	1 A	700 mA	1 A	1.5 A	2 A	-
Voltage - Collector Emitter Breakdown (Max)	100 V	160 V	100 V	160 V	100 V	-
Vce Saturation (Max) @ Ib, Ic	400mV @ 40mA, 400mA	400mV @ 25mA, 250mA	400mV @ 40mA, 400mA	500mV @ 50mA, 500mA	400mV @ 100mA, 1A	-
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	1µA (ICBO)	100nA (ICBO)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V	100 @ 100mA, 5V	100 @ 100mA, 5V	100 @ 100mA, 5V	100 @ 100mA, 5V	-
Power - Max	500 mW	500 mW	500 mW	500 mW	500 mW	-
Frequency - Transition	120MHz	120MHz	120MHz	120MHz	120MHz	-
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	-
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA	-
Supplier Device Package	PCP	PCP	PCP	PCP	PCP	-

onsemi 2SA1416S-TD-E

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 40mA, 400mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 5V
Power - Max:	500 mW
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP