onsemi-2SA1179N6-CPA-TB-E - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	150 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1mA, 6V
Power - Max:	200 mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	-

onsemi 2SA1179N6-CPA-TB-E