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| Part Number | 2N7000G | 2N7000 | 2N7000-G |
|---|---|---|---|
| Manufacturer | onsemi | NTE Electronics, Inc | Microchip Technology |
| Product Status | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) | 200mA (Ta) | 200mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA | 3V @ 1mA | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | - | - |
| Vgs (Max) | ±20V | - | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | 60 pF @ 25 V | 60 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 350mW (Tc) | - | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-92 (TO-226) | TO-92 | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) |
