onsemi-2N6715 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6715	2N6725	2N6515	2N6714
Manufacturer	onsemi	NTE Electronics, Inc	onsemi	NTE Electronics, Inc
Product Status	Obsolete	Active	Obsolete	Active
Transistor Type	NPN	NPN - Darlington	NPN	NPN
Current - Collector (Ic) (Max)	2 A	1 A	500 mA	2 A
Voltage - Collector Emitter Breakdown (Max)	40 V	50 V	250 V	30 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	1.5V @ 2mA, 1A	1V @ 5mA, 50mA	-
Current - Collector Cutoff (Max)	-	-	50nA (ICBO)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1A, 1V	4000 @ 1A, 5V	45 @ 50mA, 10V	-
Power - Max	1 W	1 W	625 mW	-
Frequency - Transition	500MHz	-	200MHz	-
Operating Temperature	-	-	-55°C ~ 150°C (TJ)	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-237AA	TO-226-3, TO-92-3 Long Body	TO-237AA
Supplier Device Package	TO-92-3	TO-237	TO-92 (TO-226)	TO-237

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 1A, 1V
Power - Max:	1 W
Frequency - Transition:	500MHz
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

onsemi 2N6715