onsemi-2N6387G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6387G	2N6388G	2N6487G	2N6287G	2N6387
Manufacturer	onsemi	onsemi	onsemi	onsemi	Harris Corporation
Product Status	Active	Active	Active	Obsolete	Active
Transistor Type	NPN - Darlington	NPN - Darlington	NPN	PNP - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	10 A	10 A	15 A	20 A	10 A
Voltage - Collector Emitter Breakdown (Max)	60 V	80 V	60 V	100 V	60 V
Vce Saturation (Max) @ Ib, Ic	3V @ 100mA, 10A	3V @ 100mA, 10A	3.5V @ 5A, 15A	3V @ 200mA, 20A	3V @ 100mA, 10A
Current - Collector Cutoff (Max)	1mA	1mA	1mA	1mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 3V	1000 @ 5A, 3V	20 @ 5A, 4V	750 @ 10A, 3V	1000 @ 5A, 3V
Power - Max	2 W	2 W	1.8 W	160 W	2 W
Frequency - Transition	-	-	5MHz	-	-
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-204AA, TO-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-204 (TO-3)	TO-220AB

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 100mA, 10A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 5A, 3V
Power - Max:	2 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

onsemi 2N6387G