onsemi-2N5961_D27Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 10mA, 5V
Power - Max:	625 mW
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

onsemi 2N5961_D27Z