onsemi-2N5883G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N5883G	2N5885G	2N5884G	2N5886G	2N5883
Manufacturer	onsemi	onsemi	onsemi	onsemi	Microchip Technology
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Active
Transistor Type	PNP	NPN	PNP	NPN	-
Current - Collector (Ic) (Max)	25 A	25 A	25 A	25 A	-
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	80 V	80 V	-
Vce Saturation (Max) @ Ib, Ic	4V @ 6.25A, 25A	4V @ 6.25A, 25A	4V @ 6.25A, 25A	4V @ 6.25A, 25A	-
Current - Collector Cutoff (Max)	2mA	2mA	2mA	2mA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10A, 4V	20 @ 10A, 4V	20 @ 10A, 4V	20 @ 10A, 4V	-
Power - Max	200 W	200 W	200 W	200 W	-
Frequency - Transition	4MHz	4MHz	4MHz	4MHz	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	-
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	-
Supplier Device Package	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)	-

onsemi 2N5883G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	25 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	4V @ 6.25A, 25A
Current - Collector Cutoff (Max):	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 10A, 4V
Power - Max:	200 W
Frequency - Transition:	4MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-204 (TO-3)