onsemi-2N5770 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	-
Noise Figure (dB Typ @ f):	6dB @ 60MHz
Gain:	15dB
Power - Max:	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 8mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

onsemi 2N5770