onsemi-2N5769 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	200 mA
Voltage - Collector Emitter Breakdown (Max):	15 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	400µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 10mA, 350mV
Power - Max:	350 mW
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

onsemi 2N5769