onsemi-2N5686G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N5686G	2N5886G	2N5684G	2N5686
Manufacturer	onsemi	onsemi	onsemi	NTE Electronics, Inc
Product Status	Active	Obsolete	Active	Active
Transistor Type	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	50 A	25 A	50 A	50 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	5V @ 10A, 50A	4V @ 6.25A, 25A	5V @ 10A, 50A	1V @ 2.5A, 25A
Current - Collector Cutoff (Max)	1mA	2mA	1mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 25A, 2V	20 @ 10A, 4V	15 @ 25A, 2V	15 @ 25A, 2V
Power - Max	300 W	200 W	300 W	300 W
Frequency - Transition	2MHz	4MHz	2MHz	2MHz
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-204AE	TO-204AA, TO-3	TO-204AE	TO-204AE
Supplier Device Package	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)

onsemi 2N5686G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	50 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	5V @ 10A, 50A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 25A, 2V
Power - Max:	300 W
Frequency - Transition:	2MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AE
Supplier Device Package:	TO-204 (TO-3)