onsemi-2N5655 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N5655	2N5685	2N5955	2N5657	2N5655G
Manufacturer	onsemi	NTE Electronics, Inc	Microchip Technology	STMicroelectronics	onsemi
Product Status	Obsolete	Active	Active	Obsolete	Obsolete
Transistor Type	NPN	NPN	PNP	NPN	NPN
Current - Collector (Ic) (Max)	500 mA	50 A	6 A	500 mA	500 mA
Voltage - Collector Emitter Breakdown (Max)	250 V	60 V	60 V	350 V	250 V
Vce Saturation (Max) @ Ib, Ic	10V @ 100mA, 500mA	5V @ 10A, 50A	-	10V @ 100mA, 500mA	10V @ 100mA, 500mA
Current - Collector Cutoff (Max)	100µA	1mA	-	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 100mA, 10mV	15 @ 25A, 2V	-	30 @ 100mA, 10V	30 @ 100mA, 10mV
Power - Max	20 W	300 W	40 W	20 W	20 W
Frequency - Transition	10MHz	2MHz	-	10MHz	10MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 200°C (TJ)	-	150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-204AA, TO-3	TO-213AA, TO-66-2	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-3	TO-66 (TO-213AA)	SOT-32-3	TO-126

onsemi 2N5655

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	250 V
Vce Saturation (Max) @ Ib, Ic:	10V @ 100mA, 500mA
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 100mA, 10mV
Power - Max:	20 W
Frequency - Transition:	10MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126