2N5551TFR
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onsemi 2N5551TFR

Manufacturer No:
2N5551TFR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
2N5551TFR Datasheet
ECAD Model:
-
Description:
TRANS NPN 160V 0.6A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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$0.39
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Similar Products

Part Number 2N5551TFR 2N5550TFR   2N5551TAR   2N5551TF  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 140 V 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 100nA (ICBO) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 60 @ 10mA, 5V 80 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 100MHz 300MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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