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| Part Number | 2N5551TA | 2N5551TF | 2N5551YTA | 2N5551TAR | 2N5550TA | 2N5551CTA |
|---|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Product Status | Active | Active | Obsolete | Obsolete | Active | Obsolete |
| Transistor Type | NPN | NPN | NPN | NPN | NPN | NPN |
| Current - Collector (Ic) (Max) | 600 mA | 600 mA | 600 mA | 600 mA | 600 mA | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | 160 V | 160 V | 160 V | 140 V | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 250mV @ 5mA, 50mA | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) | 50nA (ICBO) | - | 50nA (ICBO) | 100nA (ICBO) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | 80 @ 10mA, 5V | 180 @ 10mA, 5V | 80 @ 10mA, 5V | 60 @ 10mA, 5V | 80 @ 10mA, 5V |
| Power - Max | 625 mW | 625 mW | 625 mW | 625 mW | 625 mW | 625 mW |
| Frequency - Transition | 100MHz | 100MHz | 100MHz | 100MHz | 300MHz | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 |
