2N5460G
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onsemi 2N5460G

Manufacturer No:
2N5460G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
2N5460G Datasheet
ECAD Model:
-
Description:
JFET P-CH 40V 0.35W TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):40 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):1 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:750 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
Resistance - RDS(On):- 
Power - Max:350 mW
Operating Temperature:-65°C ~ 135°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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In Stock

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Similar Products

Part Number 2N5460G 2N5461G   2N5462G   2N5460  
Manufacturer onsemi onsemi onsemi NTE Electronics, Inc
Product Status Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel P-Channel
Voltage - Breakdown (V(BR)GSS) 40 V 40 V 40 V 40 V
Drain to Source Voltage (Vdss) - - - -
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 15 V 2 mA @ 15 V 4 mA @ 15 V 1 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 750 mV @ 1 µA 1 V @ 1 µA 1.8 V @ 1 µA 750 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V 7pF @ 15V 7pF @ 15V 7pF @ 15V
Resistance - RDS(On) - - - -
Power - Max 350 mW 350 mW 350 mW 310 mW
Operating Temperature -65°C ~ 135°C (TJ) -65°C ~ 135°C (TJ) -65°C ~ 135°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92

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