onsemi-2N5190 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N5190	2N5190G	2N5191	2N5192	2N5195	2N5193	2N5194
Manufacturer	onsemi	onsemi	STMicroelectronics	NTE Electronics, Inc	NTE Electronics, Inc	Solid State Inc.	onsemi
Product Status	Obsolete	Active	Obsolete	Active	Active	Active	Obsolete
Transistor Type	NPN	NPN	NPN	NPN	PNP	PNP	PNP
Current - Collector (Ic) (Max)	4 A	4 A	4 A	4 A	4 A	-	4 A
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	60 V	80 V	80 V	-	60 V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 1A, 4A	1.4V @ 1A, 4A	1.4V @ 1A, 4A	600mV @ 150mA, 1.5A	1.2V @ 1A, 4A	-	600mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)	1mA	1mA	1mA	1mA	1mA	-	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1.5A, 2V	25 @ 1.5A, 2V	25 @ 1.5A, 2V	20 @ 1.5A, 2V	20 @ 1.5A, 2V	-	25 @ 1.5A, 2V
Power - Max	40 W	40 W	40 W	40 W	40 W	-	40 W
Frequency - Transition	2MHz	2MHz	2MHz	2MHz	2MHz	-	2MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)	-	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	SOT-32-3	TO-126	SOT-32-3	TO-126	TO-126

onsemi 2N5190

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	1.4V @ 1A, 4A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 1.5A, 2V
Power - Max:	40 W
Frequency - Transition:	2MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126