onsemi-2N5088TAR - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N5088TAR	2N5088TFR	2N5089TAR	2N5086TAR	2N5087TAR	2N5088TA
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	Fairchild Semiconductor
Product Status	Active	Obsolete	Obsolete	Obsolete	Obsolete	Active
Transistor Type	NPN	NPN	NPN	PNP	PNP	NPN
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V	30 V	25 V	50 V	50 V	30 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA	500mV @ 1mA, 10mA	500mV @ 1mA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA	500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	50nA (ICBO)	50nA (ICBO)	50nA (ICBO)	50nA	50nA	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100µA, 5V	300 @ 100µA, 5V	400 @ 100µA, 5V	150 @ 100µA, 5V	250 @ 100µA, 5V	350 @ 1mA, 5V
Power - Max	625 mW	625 mW	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	50MHz	50MHz	50MHz	40MHz	40MHz	50MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi 2N5088TAR

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100µA, 5V
Power - Max:	625 mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3