onsemi-2N5087TAR - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N5087TAR	2N5088TAR	2N5087TFR	2N5089TAR	2N5086TAR	2N5087TA
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	NPN	PNP	NPN	PNP	PNP
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	30 V	50 V	25 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA	500mV @ 1mA, 10mA	300mV @ 1mA, 10mA	500mV @ 1mA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	50nA	50nA (ICBO)	50nA	50nA (ICBO)	50nA	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100µA, 5V	300 @ 100µA, 5V	250 @ 100µA, 5V	400 @ 100µA, 5V	150 @ 100µA, 5V	250 @ 100µA, 5V
Power - Max	625 mW	625 mW	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	40MHz	50MHz	40MHz	50MHz	40MHz	40MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi 2N5087TAR

Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100µA, 5V
Power - Max:	625 mW
Frequency - Transition:	40MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3