onsemi-2N4923G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N4923G	2N4920G	2N4921G	2N4922G	2N4923
Manufacturer	onsemi	onsemi	onsemi	onsemi	NTE Electronics, Inc
Product Status	Active	Active	Obsolete	Active	Active
Transistor Type	NPN	PNP	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	40 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	500µA	500µA	500µA	500µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500mA, 1V	30 @ 500mA, 1V	30 @ 500mA, 1V	30 @ 500mA, 1V	30 @ 500mA, 1V
Power - Max	30 W	30 W	30 W	30 W	30 W
Frequency - Transition	3MHz	3MHz	3MHz	3MHz	3MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126	TO-126	TO-126

onsemi 2N4923G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 500mA, 1V
Power - Max:	30 W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126