onsemi-2N4921 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N4921	2N4923	2N4921G	2N4924	2N4920
Manufacturer	onsemi	NTE Electronics, Inc	onsemi	Solid State Inc.	Solid State Inc.
Product Status	Obsolete	Active	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	200 mA	1 A
Voltage - Collector Emitter Breakdown (Max)	40 V	80 V	40 V	100 V	80 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A	400mV @ 5mA, 50mA	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	500µA	500µA	500µA	100nA (ICBO)	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500mA, 1V	30 @ 500mA, 1V	30 @ 500mA, 1V	40 @ 150mA, 10V	40 @ 50mA, 1V
Power - Max	30 W	30 W	30 W	1 W	30 W
Frequency - Transition	3MHz	3MHz	3MHz	500MHz	3MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 200°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-205AD, TO-39-3 Metal Can	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126	TO-39	TO-126

onsemi 2N4921

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 500mA, 1V
Power - Max:	30 W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126